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AFN6800WS

N-Channel MOSFET

AFN6800WS Features

* 30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S

AFN6800WS General Description

AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFN6800WS Datasheet (669.50 KB)

Preview of AFN6800WS PDF

Datasheet Details

Part number:

AFN6800WS

Manufacturer:

Alfa-MOS

File Size:

669.50 KB

Description:

N-channel mosfet.

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TAGS

AFN6800WS N-Channel MOSFET Alfa-MOS

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