AFN6820, AFN6820-Alfa Datasheet - Alfa-MOS

AFN6820 N-Channel MOSFET

AFN6820, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN6820 Features

* 20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=68mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=88mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel PPin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2

AFN6820-Alfa-MOS.pdf