AFN6830, AFN6830-Alfa Datasheet - Alfa-MOS

AFN6830 30V N-Channel MOSFET

AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN6830 Features

* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V

* 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V

* 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* TSOP-6 package design Application

* Power Management in Note book

* LED Display

* DC-DC System

* LCD P

AFN6830-Alfa-MOS.pdf

AFN6830 Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN6830, AFN6830-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN6830, AFN6830-Alfa

Manufacturer:

Alfa-MOS

File Size:

348.22 KB

Description:

30v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN6830, AFN6830-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN6830 AFN6830-Alfa 30V N-Channel MOSFET Alfa-MOS

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