AFN6812W, AFN6812W-Alfa 100V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology General .
AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN6812W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN6812W, AFN6812W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN6812W, AFN6812W-Alfa
Manufacturer: Alfa-MOS
File Size: 819.48 KB
Datasheet: AFN6812W-Alfa-MOS.pdf
Description: 100V N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN6812W, AFN6812W-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=3.6A,RDS(ON)=105mΩ@VGS=10V
* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)

AFN6812W Distributors

📁 Related Datasheet

AFN2308AS23RG AFND1208U1 AFND1G08U3

📌 All Tags

AFN6812W-Alfa 100V N-Channel Enhancement Mode MOSFET Alfa-MOS

Alfa-MOS AFN6812W-like datasheet