Datasheet Details
Part number:
AFN6812W, AFN6812W-Alfa
Manufacturer:
Alfa-MOS
File Size:
819.48 KB
Description:
100v n-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: AFN6812W, AFN6812W-Alfa.
Please refer to the document for exact specifications by model.
AFN6812W, AFN6812W-Alfa, 100V N-Channel Enhancement Mode MOSFET
AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN6812W Features
* ID=3.6A,RDS(ON)=105mΩ@VGS=10V
* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TSOP-6 package design Application
* Power Management in Note book
* LED Display
* DC-DC System
* LCD Panel Pin Define Pin 1 2 3 4 5 6 Symb
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