AFN6812W Datasheet, Mosfet, Alfa-MOS

AFN6812W Features

• Mosfet
• ID=3.6A,RDS(ON)=105mΩ@VGS=10V
• ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS (ON)
• TSOP-6 package design App

PDF File Details

Part number:

AFN6812W

Manufacturer:

Alfa-MOS

File Size:

819.48kb

Download:

📄 Datasheet

Description:

100v n-channel enhancement mode mosfet. AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN6812W Application

• Applications Pin Description ( TSOP-6 ) AFN6812W 100V N-Channel Enhancement Mode MOSFET Features
• ID=3.6A,RDS(ON)=105mΩ@VGS=10V

TAGS

AFN6812W

Alfa-MOS

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