AFN6812W, AFN6812W-Alfa Datasheet - Alfa-MOS

AFN6812W 100V N-Channel Enhancement Mode MOSFET

AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN6812W Features

* ID=3.6A,RDS(ON)=105mΩ@VGS=10V

* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* TSOP-6 package design Application

* Power Management in Note book

* LED Display

* DC-DC System

* LCD Panel Pin Define Pin 1 2 3 4 5 6 Symb

AFN6812W-Alfa-MOS.pdf

AFN6812W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN6812W, AFN6812W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN6812W, AFN6812W-Alfa

Manufacturer:

Alfa-MOS

File Size:

819.48 KB

Description:

100v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN6812W, AFN6812W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN6812W AFN6812W-Alfa 100V N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN6812W Distributor