AFN6872S, AFN6872S-Alfa Datasheet - Alfa-MOS

AFN6872S 150V N-Channel Enhancement Mode MOSFET

AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN6872S Features

* ID=20A,RDS(ON)=18mΩ@VGS=10V

* ID=15A,RDS(ON)=20mΩ@VGS=6V

* Super high density cell design for extremely low RDS (ON)

* DFN5X6-8L package design Application

* Networking / Telecom / Server

* LED Lighting Applications

* Quick Charger Applications

* DC-DC Primary Side

AFN6872S-Alfa-MOS.pdf

AFN6872S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN6872S, AFN6872S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN6872S, AFN6872S-Alfa

Manufacturer:

Alfa-MOS

File Size:

499.59 KB

Description:

150v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN6872S, AFN6872S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN6872S AFN6872S-Alfa 150V N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN6872S Distributor