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AFN6870S

N-Channel MOSFET

AFN6870S Features

* z 100V/20A,RDS(ON)=6.0mΩ@VGS=10V z 100V/15A,RDS(ON)=8.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Networking / Telecom / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch Pin Define Pin

AFN6870S General Description

AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN6870S Datasheet (315.00 KB)

Preview of AFN6870S PDF

Datasheet Details

Part number:

AFN6870S

Manufacturer:

Alfa-MOS

File Size:

315.00 KB

Description:

N-channel mosfet.

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TAGS

AFN6870S N-Channel MOSFET Alfa-MOS

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