Part number:
AFN6882S
Manufacturer:
Alfa-MOS
File Size:
312.33 KB
Description:
N-channel mosfet.
* z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V z 100V/15A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Networking / Telecom / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch Pin Define Pin
AFN6882S Datasheet (312.33 KB)
AFN6882S
Alfa-MOS
312.33 KB
N-channel mosfet.
📁 Related Datasheet
AFN6800WS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN6802WS - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN6802WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
AFN6804S - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
AFN6804S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN6804S, N-Channel enhancement mode MOSFET, uses Advanced T.
AFN6810W - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN6812W - 100V N-Channel Enhancement Mode MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFN6820 - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN6820, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFN6830 - 30V N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFN6870S - N-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
AFN6870S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN6870S, N-Channel enhancement mode MOSFET, uses Advanced T.