AFN7472S Datasheet - Alfa-MOS

AFN7472S N-Channel MOSFET

AFN7472S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN7472S Features

* 30V/15A,RDS(ON)=8.6mΩ@VGS=10V 30V/13A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design Application DC-DC Converter POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Or

AFN7472S Datasheet (499.79 KB)