AFP2415WS Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP2415WS Features

* z -20V/-5.6A,RDS(ON)=32mΩ@VGS=-4.5V z -20V/-2.8A,RDS(ON)=42mΩ@VGS=-2.5V z -20V/-2.0A,RDS(ON)=60mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Load Switch, PA Switch and B

AFP2415WS General Description

AFP2415WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFP2415WS Datasheet (566.48 KB)

AFP2415WS Datasheet Preview — Preview of AFP2415WS PDF

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AFP2415WS

Manufacturer:

Alfa-MOS

File Size:

566.48 KB

Description:

P-channel enhancement mode mosfet.

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AFP2415WS P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP2415WS Features

AFP2415WS General Description

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