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AFP2125S, AFP2125S-Alfa Datasheet - Alfa-MOS

AFP2125S P-Channel Enhancement Mode MOSFET

AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP2125S Features

* -200V/-0.5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.3A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV) Diode design

* in SOT-23-3L package design Application Active Clamp Circuits

AFP2125S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP2125S, AFP2125S-Alfa. Please refer to the document for exact specifications by model.
AFP2125S Datasheet Preview Page 2 AFP2125S Datasheet Preview Page 3

Datasheet Details

Part number:

AFP2125S, AFP2125S-Alfa

Manufacturer:

Alfa-MOS

File Size:

583.51 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP2125S, AFP2125S-Alfa.
Please refer to the document for exact specifications by model.

AFP2125S Distributor

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TAGS

AFP2125S AFP2125S-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS