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AFP2125S, AFP2125S-Alfa P-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFP2125S, AFP2125S-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFP2125S, AFP2125S-Alfa
Manufacturer
Alfa-MOS
File Size
583.51 KB
Datasheet
AFP2125S-Alfa-MOS.pdf
Description
P-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP2125S, AFP2125S-Alfa.
Please refer to the document for exact specifications by model.

Features

* -200V/-0.5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.3A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV) Diode design

AFP2125S Distributors

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