AFP2431WS, AFP2431WS-Alfa - P-Channel Enhancement Mode MOSFET

Alfa-MOS

Datasheet Details

Part number	AFP2431WS, AFP2431WS-Alfa
Manufacturer	Alfa-MOS
File Size	567.93 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP2431WS-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP2431WS, AFP2431WS-Alfa. Please refer to the document for exact specifications by model.

AFP2431WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

z -20V/-3.0A,RDS(ON)=25mΩ@VGS=-4.5V z -20V/-3.0A,RDS(ON)=33mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=42mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design.

📁 AFP2431WS Similar Datasheet

Other Datasheets by Alfa-MOS

Published: Nov 22, 2018 |