AFP2431WS Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP2431WS Features

* z -20V/-3.0A,RDS(ON)=25mΩ@VGS=-4.5V z -20V/-3.0A,RDS(ON)=33mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=42mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Load Switch, PA Switch and B

AFP2431WS General Description

AFP2431WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFP2431WS Datasheet (567.93 KB)

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AFP2431WS

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Alfa-MOS

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567.93 KB

Description:

P-channel enhancement mode mosfet.

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AFP2431WS P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP2431WS Features

AFP2431WS General Description

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