AFP2911W, AFP2911W-Alfa - P-Channel Enhancement Mode MOSFET

Alfa-MOS

Datasheet Details

Part number	AFP2911W, AFP2911W-Alfa
Manufacturer	Alfa-MOS
File Size	551.81 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP2911W-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP2911W, AFP2911W-Alfa. Please refer to the document for exact specifications by model.

AFP2911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

z -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V z -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design.

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Published: Nov 22, 2018 |