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AFP2911W Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP2911W Features

* z -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V z -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V z -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Load Switch z Portable Equ

AFP2911W General Description

AFP2911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP2911W Datasheet (551.81 KB)

Preview of AFP2911W PDF

Datasheet Details

Part number:

AFP2911W

Manufacturer:

Alfa-MOS

File Size:

551.81 KB

Description:

P-channel enhancement mode mosfet.

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AFP2911W P-Channel Enhancement Mode MOSFET Alfa-MOS

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