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AFP2925W, AFP2925W-Alfa Datasheet - Alfa-MOS

AFP2925W P-Channel Enhancement Mode MOSFET

AFP2925W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP2925W Features

* z -20V/-3.6A,RDS(ON)=50mΩ@VGS=-4.5V z -20V/-3.2A,RDS(ON)=63mΩ@VGS=-2.5V z -20V/-1.2A,RDS(ON)=84mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Charger Switches and Load Sw

AFP2925W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP2925W, AFP2925W-Alfa. Please refer to the document for exact specifications by model.
AFP2925W Datasheet Preview Page 2 AFP2925W Datasheet Preview Page 3

Datasheet Details

Part number:

AFP2925W, AFP2925W-Alfa

Manufacturer:

Alfa-MOS

File Size:

550.12 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP2925W, AFP2925W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP2925W AFP2925W-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

AFP2925W Distributor