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AFP3679S, AFP3679S-Alfa Datasheet - Alfa-MOS

AFP3679S P-Channel Enhancement Mode MOSFET

AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP3679S Features

* -30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ord

AFP3679S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP3679S, AFP3679S-Alfa. Please refer to the document for exact specifications by model.
AFP3679S Datasheet Preview Page 2 AFP3679S Datasheet Preview Page 3

Datasheet Details

Part number:

AFP3679S, AFP3679S-Alfa

Manufacturer:

Alfa-MOS

File Size:

819.30 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP3679S, AFP3679S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP3679S AFP3679S-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

AFP3679S Distributor