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AFP3981

P-Channel MOSFET

AFP3981 Features

* -20V/-3.2A,RDS(ON)=100mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=135mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=190mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Equ

AFP3981 General Description

AFP3981, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP3981 Datasheet (530.95 KB)

Preview of AFP3981 PDF

Datasheet Details

Part number:

AFP3981

Manufacturer:

Alfa-MOS

File Size:

530.95 KB

Description:

P-channel mosfet.

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TAGS

AFP3981 P-Channel MOSFET Alfa-MOS

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