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AFP3911W

P-Channel Enhancement Mode MOSFET

AFP3911W Features

* z -30V/-3A,RDS(ON)=68mΩ@VGS=-10V z -30V/-2A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Smart Phones, Tablet PCs, Mobile Computing : - Battery Switches - Loa

AFP3911W General Description

AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP3911W Datasheet (522.20 KB)

Preview of AFP3911W PDF

Datasheet Details

Part number:

AFP3911W

Manufacturer:

Alfa-MOS

File Size:

522.20 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP3911W P-Channel Enhancement Mode MOSFET Alfa-MOS

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