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AS4C1M16F5 5V 1M x 16 CMOS DRAM

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Description

August 2001 ® AS4C1M16F5 5V 1M×16 CMOS DRAM (fast-page mode) .
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 V.

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Datasheet Specifications

Part number
AS4C1M16F5
Manufacturer
Alliance Semiconductor
File Size
633.55 KB
Datasheet
AS4C1M16F5_AllianceSemiconductor.pdf
Description
5V 1M x 16 CMOS DRAM

Features

* Organization: 1,048,576 words × 16 bits
* High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time
* Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ
* Fast page mode

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