AS4C4M4F0 - 5V 4M x 4 CMOS DRAM

Alliance Semiconductor

AS4C4M4F0 Datasheet Preview — Preview of AS4C4M4F0 PDF

Datasheet Details

Part number	AS4C4M4F0
Manufacturer	Alliance Semiconductor
File Size	259.46 KB
Description	5V 4M x 4 CMOS DRAM
Datasheet	AS4C4M4F0-AllianceSemiconductor.pdf

AS4C4M4F0 Product details

Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current Symbol tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5 AS4C4M4F0-50 AS4C4M4F1-50 50

Features

Organization: 4,194,304 words × 4 bits.
High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O.
Fast page mode.
Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh.
TTL-compatible, three-stat.

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Other Datasheets by Alliance Semiconductor

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Published: Nov 24, 2014 |