AS4C4M4F0 Datasheet, Dram, Alliance Semiconductor

AS4C4M4F0 Features

• Dram
• Organization: 4,194,304 words × 4 bits
• High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
• Low power con

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AS4C4M4F0

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Alliance Semiconductor

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📄 Datasheet

Description:

5v 4m x 4 cmos dram. A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output

AS4C4M4F0 Application

• Applications These devices feature a high speed page mode operation where read and write operations within a single row (or page) can be executed a

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AS4C4M4F0

Alliance Semiconductor

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