AS4C4M4F1 Datasheet, Dram, Alliance Semiconductor

AS4C4M4F1 Features

• Dram
• Organization: 4,194,304 words × 4 bits
• High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
• Low power con

PDF File Details

Part number:

AS4C4M4F1

Manufacturer:

Alliance Semiconductor

File Size:

259.46kb

Download:

📄 Datasheet

Description:

5v 4m x 4 cmos dram. A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output

AS4C4M4F1 Application

• Applications These devices feature a high speed page mode operation where read and write operations within a single row (or page) can be executed a

TAGS

AS4C4M4F1

Alliance Semiconductor

📁 Related Datasheet

AS4C4M4F0 - 5V 4M x 4 CMOS DRAM (Alliance Semiconductor)
® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time -.

AS4C4M4 - 16M FPM DRAM (Austin Semiconductor)
16 Me g FPM DRAM Meg Austin Semiconductor, Inc. 4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 Vcc DQ.

AS4C4M4E0 - 4M x 4 CMOS DRAM (Alliance Semiconductor)
w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

AS4C4M4E1 - 4M x 4 CMOS DRAM (Alliance Semiconductor)
May 2001 ® AS4C4M4E1 4M×4 CMOS DRAM (EDO) family Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 n.

AS4C4M16D1A - DDR (Alliance Semiconductor)
4Mx16 DDR1-AS4C4M16D1A Revision History AS4C4M16D1A - 66-pin TSOPII PACKAGE Revision Details Rev 1.1 Preliminary datasheet Date July 2015 Alliance .

AS4C4M16S - 64Mb / 4M x 16 bit Synchronous DRAM (Alliance Semiconductor)
AS4C4M16S Revision History AS4C4M16S- 54PIN 400 MIL PLASTIC TSOP II PACKAGE Revision Rev 1.0 Rev 2.0 Details Preliminary datasheet Removed 6TAN –– au.

AS4C4M16SA - 64M Synchronous DRAM (Alliance Semiconductor)
AS4C4M16SA-Automotive Revision History Revision Rev 1.0 Rev 2.0 Rev 3.0 Details Preliminary datasheet Add 143MHZ parts. 1. Remove AS4C4M16SA-7BAN, .

AS4C4M16SA-C - 64M - (4M x 16 bit) Synchronous DRAM (Alliance Semiconductor)
AS4C4M16SA-C&I Revision History Revision Rev 1.0 Rev 2.0 Rev 3.0 Rev 4.0 Details Preliminary datasheet. Modify some typing errors. Add AS4C4M16SA-6.

AS4C4M16SA-I - 64M - (4M x 16 bit) Synchronous DRAM (Alliance Semiconductor)
AS4C4M16SA-C&I Revision History Revision Rev 1.0 Rev 2.0 Rev 3.0 Rev 4.0 Details Preliminary datasheet. Modify some typing errors. Add AS4C4M16SA-6.

AS4C4M32S - 4M x 32 bit Synchronous DRAM (Alliance Semiconductor)
AS4C4M32S Revision History AS4C4M32S- 90 Ball TFBGA PACKAGE Revision Rev 1.0 Rev 2.0 Rev 3.0 Details Preliminary datasheet Added 166MHz option -6 c.