AS4C4M4F1, AS4C4M4F0 Datasheet - Alliance Semiconductor

AS4C4M4F1 5V 4M x 4 CMOS DRAM

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access ti.

AS4C4M4F1 Features

* Organization: 4,194,304 words × 4 bits

* High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time

* Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O

* Fast page mode

* Refresh - 4096 ref

AS4C4M4F0-AllianceSemiconductor.pdf

AS4C4M4F1 Datasheet Preview — This datasheet PDF includes multiple part numbers: AS4C4M4F1, AS4C4M4F0. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AS4C4M4F1, AS4C4M4F0

Manufacturer:

Alliance Semiconductor

File Size:

259.46 KB

Description:

5v 4m x 4 cmos dram.

Note:

This datasheet PDF includes multiple part numbers: AS4C4M4F1, AS4C4M4F0.
Please refer to the document for exact specifications by model.

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