AOD4104 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. TO-252 D-PAK

VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.6m Ω (VGS = 20V) RDS(ON) < 4.5m Ω (VGS = 12V) RDS(ON) < 5.4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C.

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