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AO3410 - N-Channel MOSFET

Datasheet Summary

Description

The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 5.8 4.9 30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and St.

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Datasheet Details

Part number AO3410
Manufacturer Alpha & Omega Semiconductors
File Size 162.19 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3410 Datasheet
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Full PDF Text Transcription

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August 2002 AO3410 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 5.8 4.9 30 1.
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