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AO3410 N-Channel MOSFET

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Description

August 2002 AO3410 N-Channel Enhancement Mode Field Effect Transistor General .
The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number
AO3410
Manufacturer
Alpha & Omega Semiconductors
File Size
162.19 KB
Datasheet
AO3410-AlphaOmegaSemiconductors.pdf
Description
N-Channel MOSFET

Features

* VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage C

AO3410 Distributors

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N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO3410-like datasheet