AO3410 - N-Channel MOSFET

Alpha & Omega Semiconductors

AO3410 Datasheet Preview — Preview of AO3410 PDF

Datasheet Details

Part number	AO3410
Manufacturer	Alpha & Omega Semiconductors
File Size	162.19 KB
Description	N-Channel MOSFET
Datasheet	AO3410-AlphaOmegaSemiconductors.pdf

AO3410 Product details

Description

The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V.

Features

VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 5.8 4.9 30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and St.

📁 AO3410 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

AO3413 - 20V P-Channel MOSFET
AO3414 - 20V N-Channel MOSFET
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AO3416 - 20V N-Channel MOSFET

Published: Sep 14, 2014 |