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AO3413 - 20V P-Channel MOSFET

Datasheet Summary

Description

The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V ID = -3A RDS(ON) < 80mW RDS(ON) < 100mW RDS(ON) < 130mW (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -3 -2.

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Datasheet Details

Part number AO3413
Manufacturer Alpha & Omega Semiconductors
File Size 247.86 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet AO3413 Datasheet
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AO3413 20V P-Channel MOSFET General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS = -20V ID = -3A RDS(ON) < 80mW RDS(ON) < 100mW RDS(ON) < 130mW (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -3 -2.4 -15 1.4 0.
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