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AO3414L - N-Channel MOSFET

Datasheet Summary

Description

The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

AO3414L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = 20V ID = 4.2 A RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) RDS(ON) < 87mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 4.2 3.2 15 1.4 0.9 -55 to 150 Thermal.

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Datasheet Details

Part number AO3414L
Manufacturer Alpha & Omega Semiconductors
File Size 108.53 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3414L Datasheet
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Full PDF Text Transcription

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Rev 3: Nov 2004 AO3414, AO3414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3414L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 20V ID = 4.2 A RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) RDS(ON) < 87mΩ (VGS = 1.
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