AO3418 N-Channel MOSFET

KERSEMI

Description

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The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: AO3418
Manufacturer: KERSEMI
File Size: 818.43 KB
Datasheet: AO3418-KERSEMI.pdf
Description: N-Channel MOSFET

Applications

* AO3418L ( Green Product ) is offered in a lead-free package. G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation

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AO3418 N-Channel MOSFET KERSEMI

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