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AO3418L

N-Channel MOSFET

AO3418L Features

* VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide ex

AO3418L General Description

The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package. G Absolute Maximum Ra.

AO3418L Datasheet (818.43 KB)

Preview of AO3418L PDF

Datasheet Details

Part number:

AO3418L

Manufacturer:

KERSEMI

File Size:

818.43 KB

Description:

N-channel mosfet.

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AO3418L N-Channel MOSFET KERSEMI

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