AO4930 - Dual N-Channel Enhancement Mode Field Effect Transistor
The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.
A monolithically integrated Schottky diode in www.DataSheet4U.com parallel with the syn
AO4930 Features
* FET1 VDS (V) = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ FET2 V DS(V) = 30V I D=9A (V GS = 10V)
