AOD413Y P-Channel MOSFET

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AOD413Y P-Channel Enhancement Mode Field Effect Transistor General .
The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

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Datasheet Specifications

Part number: AOD413Y
Manufacturer: Alpha & Omega Semiconductors
File Size: 142.88 KB
Datasheet: AOD413Y_AlphaOmegaSemiconductors.pdf
Description: P-Channel MOSFET

Features

* VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pul

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AOD413Y P-Channel MOSFET Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AOD413Y-like datasheet