AOD413Y Datasheet - Alpha & Omega Semiconductors

P-Channel MOSFET

AOD413Y Features

* VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pul

AOD413Y General Description

The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb.

AOD413Y Datasheet (142.88 KB)

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Datasheet Details

Part number:

AOD413Y

Manufacturer:

Alpha & Omega Semiconductors

File Size:

142.88 KB

Description:

P-channel mosfet.

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AOD413Y P-Channel MOSFET Alpha & Omega Semiconductors

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AOD413Y Features

AOD413Y General Description

Datasheet Details

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