AON5802 Datasheet (Alpha & Omega Semiconductors)

AON5802, Field Effect Transistor

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional www.DataSheet4U.com or bi-directional load switch

AON5802 Features

* VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Pa