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AON5802

Field Effect Transistor

AON5802 Features

* VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Pa

AON5802 General Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional www.DataSheet4U.com or bi-directional load switch.

AON5802 Datasheet (228.77 KB)

Preview of AON5802 PDF

Datasheet Details

Part number:

AON5802

Manufacturer:

Alpha & Omega Semiconductors

File Size:

228.77 KB

Description:

Field effect transistor.

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TAGS

AON5802 Field Effect Transistor Alpha & Omega Semiconductors

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