AON5802 - Field Effect Transistor

Alpha & Omega Semiconductors

AON5802 Datasheet Preview — Preview of AON5802 PDF

Datasheet Details

Part number	AON5802
Manufacturer	Alpha & Omega Semiconductors
File Size	228.77 KB
Description	Field Effect Transistor
Datasheet	AON5802_AlphaOmegaSemiconductors.pdf

AON5802 Product details

Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain . Current RθJA=75°C/W TA=70°C C Pulsed Drain Current Power Dissipation RθJA=75°C/W A Maximum 30 ±12 8 6 45 1.7.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Jul 21, 2008 |