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AON5802 Field Effect Transistor

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Description

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
AON5802
Manufacturer
Alpha & Omega Semiconductors
File Size
228.77 KB
Datasheet
AON5802_AlphaOmegaSemiconductors.pdf
Description
Field Effect Transistor

Features

* VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Pa

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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