AON5800 Field Effect Transistor

Alpha & Omega Semiconductors

Description

AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AON5800
Manufacturer: Alpha & Omega Semiconductors
File Size: 164.06 KB
Datasheet: AON5800_AlphaOmegaSemiconductors.pdf
Description: Field Effect Transistor

Features

* VDS (V) = 20V ID = 8 A (VGS = 10V) RDS(ON) < 16 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 21 mΩ (VGS = 4.0V) RDS(ON) < 22 mΩ (VGS = 3.1V) RDS(ON) < 27 mΩ (VGS = 2.5V) RDS(ON) < 45 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM S2 G2 D S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AON5800 Field Effect Transistor Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AON5800-like datasheet