AON5802 - Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Datasheet Details

Part number	AON5802
Manufacturer	Alpha & Omega Semiconductors
File Size	228.77 KB
Description	Field Effect Transistor
Datasheet	AON5802 Datasheet
Additional preview pages of the AON5802 datasheet.

Product details

Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain . Current RθJA=75°C/W TA=70°C C Pulsed Drain Current Power Dissipation RθJA=75°C/W A Maximum 30 ±12 8 6 45 1.7.

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Other Datasheets by Alpha & Omega Semiconductors

AON5802B - 30V Common-Drain Dual N-Channel MOSFET
AON5802BG - 30V Dual N-Channel MOSFET
AON5800 - Field Effect Transistor
AON5810 - Dual N-Channel MOSFET
AON5820 - 20V Common-Drain Dual N-Channel MOSFET
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Published: Jul 21, 2008 |