AON5802 Datasheet Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

AON5802 field effect transistor by Alpha & Omega Semiconductors - Datasheet Preview

Datasheet Details

Part number	AON5802
Manufacturer	Alpha & Omega Semiconductors
File Size	228.77 KB
Description	Field Effect Transistor
Download	AON5802 Download (PDF)

General Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional www.DataSheet4U.com or bi-directional load switch, facilitated by its common-drain configuration.

Overview

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect.

Key Features

VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain . Current RθJA=75°C/W TA=70°C C Pulsed Drain Current Power Dissipation RθJA=75°C/W A Maximum 30 ±12 8 6 45 1.7.

More Datasheets from Alpha & Omega Semiconductors

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AON5802B	30V Common-Drain Dual N-Channel MOSFET
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