Datasheet Details
| Part number | AON5802BG |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.61 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON5802BG Download (PDF) |
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| Part number | AON5802BG |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.61 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON5802BG Download (PDF) |
|
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• Low RDS(ON) • With ESD Protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VDS ID (at VGS=12V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V) Typical ESD protection 30V 10A < 18mΩ < 19mΩ < 21mΩ < 26mΩ HBM Class 3A DFN 2X5 Top View S1 S1 G1 Bottom View S2 S2 G2 D1/D2 S2 G2 S2 S1 S1 G1 D1 D2 G1 G2 S1 S2 Orderable Part Number AON5802BG Package Type DFN 2x5 Form Minimum Order Quantity Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 10 8.0 40 3.1 2.0 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 61 Maximum Junction-to-case Steady-State RqJC 4.6 Max 40 75 6 Units °C/W °C/W °C/W Rev.2.0: November 2017 www.aosmd.com Page 1 of 5 AON5802BG Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge
AON5802BG 30V Dual N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON5802B | 30V Common-Drain Dual N-Channel MOSFET |
| AON5802 | Field Effect Transistor |
| AON5800 | Field Effect Transistor |
| AON5810 | Dual N-Channel MOSFET |
| AON5820 | 20V Common-Drain Dual N-Channel MOSFET |
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |