AON5810 Datasheet Dual N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

AON5810 dual n-channel mosfet by Alpha & Omega Semiconductors - Datasheet Preview

Datasheet Details

Part number	AON5810
Manufacturer	Alpha & Omega Semiconductors
File Size	427.96 KB
Description	Dual N-Channel MOSFET
Download	AON5810 Download (PDF)

General Description

The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration.

Overview

AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect.

Key Features

VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current RθJA=75° C/W Pulsed Drain Current B TA=25° C Power Dis.

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