AON5800 Datasheet Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

AON5800 field effect transistor by Alpha & Omega Semiconductors - Datasheet Preview

Datasheet Details

Part number	AON5800
Manufacturer	Alpha & Omega Semiconductors
File Size	164.06 KB
Description	Field Effect Transistor
Download	AON5800 Download (PDF)

General Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while www.DataSheet4U.com retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration.

Overview

AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect.

Key Features

VDS (V) = 20V ID = 8 A (VGS = 10V) RDS(ON) < 16 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 21 mΩ (VGS = 4.0V) RDS(ON) < 22 mΩ (VGS = 3.1V) RDS(ON) < 27 mΩ (VGS = 2.5V) RDS(ON) < 45 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM S2 G2 D S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain ID Current RθJA=75°C/W TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation.

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