AON5810 Dual N-Channel MOSFET

Alpha & Omega Semiconductors

Description

AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AON5810
Manufacturer: Alpha & Omega Semiconductors
File Size: 427.96 KB
Datasheet: AON5810_AlphaOmegaSemiconductors.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AON5810 Dual N-Channel MOSFET Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AON5810-like datasheet