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AON5810

Dual N-Channel MOSFET

AON5810 Features

* VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View

AON5810 General Description

The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its .

AON5810 Datasheet (427.96 KB)

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Datasheet Details

Part number:

AON5810

Manufacturer:

Alpha & Omega Semiconductors

File Size:

427.96 KB

Description:

Dual n-channel mosfet.

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TAGS

AON5810 Dual N-Channel MOSFET Alpha & Omega Semiconductors

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