AON5810 Datasheet (Alpha & Omega Semiconductors)

AON5810, Dual N-Channel MOSFET

The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its

AON5810 Features

* VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View