Description
The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.
Features
- VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8mΩ (VGS = -4.5V) ESD Protected! 100% UIS Tested!
-RoHS Compliant -Halogen Free
Top View Fits SOIC8 footprint !
S S S G D D D D G
Rg
D
DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current
C C
S
Maximum -30 ±20 -30 -23 -160 -15 -12 -54 146 83 33 2.5 1.6.
AON6405L_AlphaOmegaSemiconductors.pdf
