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AFM06P2-000 Power GaAs MESFET

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Description

Ka Band Power GaAs MESFET Chip AFM06P2-000 .
The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.

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Datasheet Specifications

Part number
AFM06P2-000
Manufacturer
Alpha Industries
File Size
19.28 KB
Datasheet
AFM06P2-000_AlphaIndustries.pdf
Description
Power GaAs MESFET

Features

* s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC
* 40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thickness = 0.1 mm. Drain 0.395 mm 0.110 mm

Applications

* in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performanc

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