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AFM06P3-212 Power GaAs MESFET

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Description

Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 .
The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.

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Datasheet Specifications

Part number
AFM06P3-212
Manufacturer
Alpha Industries
File Size
25.51 KB
Datasheet
AFM06P3-212_AlphaIndustries.pdf
Description
Power GaAs MESFET

Features

* s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC

Applications

* in oscillator and amplifier circuits. They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation

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