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AFM06P3-213

Power GaAs MESFET

AFM06P3-213 Features

* s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC

* 18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM06P3-212, 213 are high performa

AFM06P3-213 General Description

The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of co.

AFM06P3-213 Datasheet (25.51 KB)

Preview of AFM06P3-213 PDF

Datasheet Details

Part number:

AFM06P3-213

Manufacturer:

Alpha Industries

File Size:

25.51 KB

Description:

Power gaas mesfet.

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AFM06P3-213 Power GaAs MESFET Alpha Industries

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