AFM08P2-000 Datasheet - Alpha Industries

AFM08P2-000 Power GaAs MESFET

The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifi.

AFM08P2-000 Features

* s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC

* 40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm

AFM08P2-000_AlphaIndustries.pdf