AFM08P2-000 Power GaAs MESFET

Alpha Industries

AFM08P2-000 Description

Ka Band Power GaAs MESFET Chip AFM08P2-000 .
The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.

AFM08P2-000 Features

* s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC
* 40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm

AFM08P2-000 Applications

* in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performanc

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AFM08P2-000 Datasheet Preview — Preview of AFM08P2-000 PDF

Datasheet Details

Part number: AFM08P2-000
Manufacturer: Alpha Industries
File Size: 19.40 KB
Datasheet: AFM08P2-000_AlphaIndustries.pdf
Description: Power GaAs MESFET

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Power GaAs MESFET Alpha Industries

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