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BLA9G1011L-300G, BLA9G1011L-300 Power LDMOS transistor

BLA9G1011L-300G Description

BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS transistor Rev.1 * 25 July 2017 Product data sheet 1.Product profile 1.1 General descri.
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

BLA9G1011L-300G Features

* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1030 MHz to 1090 MHz)
* Internally matched for ease of use
* Com

BLA9G1011L-300G Applications

* at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 32 317 20.6 63.5 14

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This datasheet PDF includes multiple part numbers: BLA9G1011L-300G, BLA9G1011L-300. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLA9G1011L-300G, BLA9G1011L-300
Manufacturer
Ampleon
File Size
807.73 KB
Datasheet
BLA9G1011L-300-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLA9G1011L-300G, BLA9G1011L-300.
Please refer to the document for exact specifications by model.

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Power LDMOS transistor Ampleon
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