Description
BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS transistor Rev.1 * 25 July 2017 Product data sheet 1.Product profile 1.1 General descri.
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Features
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1030 MHz to 1090 MHz)
* Internally matched for ease of use
* Com
Applications
* at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal
f
VDS
PL
Gp
D tr
tf
(MHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1030
32
317 20.6
63.5 14
