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BLC8G09XS-400AVT Power LDMOS transistor

BLC8G09XS-400AVT Description

BLC8G09XS-400AVT Power LDMOS transistor Rev.2 * 24 November 2017 Product data sheet 1.Product profile 1.1 General .
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz.

BLC8G09XS-400AVT Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

BLC8G09XS-400AVT Applications

* at frequencies from 791 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32V; IDq = 880 mA (main); VGS(amp)peak = 0.8 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V)

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Datasheet Details

Part number
BLC8G09XS-400AVT
Manufacturer
Ampleon
File Size
627.73 KB
Datasheet
BLC8G09XS-400AVT-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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