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BLC8G21LS-160AV Power LDMOS transistor

BLC8G21LS-160AV Description

BLC8G21LS-160AV Power LDMOS transistor Rev.4 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz.

BLC8G21LS-160AV Features

* Designed for broadband operation (1805 MHz to 2025 MHz)
* Decoupling leads to enable improved video bandwidth
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Internally matched for ease of use
* High power gain
* Integrated ESD protection

BLC8G21LS-160AV Applications

* at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board. Test signal f IDq VDS PL(AV) (MHz) (mA) (V) (W) 1-carrier W-CDMA 1805 to 1880 350 28 22 1-carrier W-CDMA 1880 to 2025 350 28 22 Gp D ACPR (dB) (%) (dB

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Datasheet Details

Part number
BLC8G21LS-160AV
Manufacturer
Ampleon
File Size
416.95 KB
Datasheet
BLC8G21LS-160AV-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
Ampleon BLC8G21LS-160AV-like datasheet