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BLC8G21LS-160AV

Power LDMOS transistor

BLC8G21LS-160AV Features

* Designed for broadband operation (1805 MHz to 2025 MHz)

* Decoupling leads to enable improved video bandwidth

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* High power gain

* Integrated ESD protection

BLC8G21LS-160AV General Description

160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board. Test signal f IDq VDS PL(AV) (MHz) (mA) (V) (W) 1-carrier W-CDMA 1805 to 1880 350 28 22 1-carrier W-C.

BLC8G21LS-160AV Datasheet (416.95 KB)

Preview of BLC8G21LS-160AV PDF

Datasheet Details

Part number:

BLC8G21LS-160AV

Manufacturer:

Ampleon

File Size:

416.95 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G21LS-160AV Power LDMOS transistor Ampleon

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