BLC8G21LS-160AV Datasheet (Ampleon) - Power LDMOS transistor

BLC8G21LS-160AV, Power LDMOS transistor

160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

Test signal f IDq VDS PL(AV) (MHz) (mA) (V) (W) 1-carrier W-CDMA 1805 to 1880 350 28 22 1-carrier W-C

BLC8G21LS-160AV Features

* Designed for broadband operation (1805 MHz to 2025 MHz)

* Decoupling leads to enable improved video bandwidth

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* High power gain

* Integrated ESD protection