BLC8G20LS-310AV Datasheet (Ampleon) - Power LDMOS transistor

BLC8G20LS-310AV, Power LDMOS transistor

310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0

BLC8G20LS-310AV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent