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BLC8G20LS-310AV

Power LDMOS transistor

BLC8G20LS-310AV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent

BLC8G20LS-310AV General Description

310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.

BLC8G20LS-310AV Datasheet (508.70 KB)

Preview of BLC8G20LS-310AV PDF

Datasheet Details

Part number:

BLC8G20LS-310AV

Manufacturer:

Ampleon

File Size:

508.70 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G20LS-310AV Power LDMOS transistor Ampleon

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