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BLC8G24LS-241AV

Power LDMOS transistor

BLC8G24LS-241AV Features

* Excellent ruggedness

* High-efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation (2300 MHz to 2400 MHz)

* Asymmetric design to achieve optimum efficiency across the band

* Lower output capacitance for im

BLC8G24LS-241AV General Description

240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.

BLC8G24LS-241AV Datasheet (373.92 KB)

Preview of BLC8G24LS-241AV PDF

Datasheet Details

Part number:

BLC8G24LS-241AV

Manufacturer:

Ampleon

File Size:

373.92 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G24LS-241AV Power LDMOS transistor Ampleon

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