BLC8G24LS-241AV Power LDMOS transistor

Ampleon

Description

BLC8G24LS-241AV Power LDMOS transistor Rev.2 * 2 December 2016 Product data sheet 1.Product profile 1.1 General .
240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

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Datasheet Specifications

Part number: BLC8G24LS-241AV
Manufacturer: Ampleon
File Size: 373.92 KB
Datasheet: BLC8G24LS-241AV-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High-efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 2400 MHz)
* Asymmetric design to achieve optimum efficiency across the band
* Lower output capacitance for im

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V)

BLC8G24LS-241AV Distributors

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BLC8G24LS-241AV Power LDMOS transistor Ampleon

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