BLC8G20LS-400AV Power LDMOS transistor

Ampleon

Description

BLC8G20LS-400AV Power LDMOS transistor Rev.4 * 24 November 2017 Product data sheet 1.Product profile 1.1 General .
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

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Datasheet Specifications

Part number: BLC8G20LS-400AV
Manufacturer: Ampleon
File Size: 493.62 KB
Datasheet: BLC8G20LS-400AV-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* Excellent electrical stability
* Suitable for conventional and inverted Doherty
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capa

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V

BLC8G20LS-400AV Distributors

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BLC8G20LS-400AV Power LDMOS transistor Ampleon

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