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BLC8G20LS-400AV

Power LDMOS transistor

BLC8G20LS-400AV Features

* Excellent ruggedness

* Excellent electrical stability

* Suitable for conventional and inverted Doherty

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capa

BLC8G20LS-400AV General Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.

BLC8G20LS-400AV Datasheet (493.62 KB)

Preview of BLC8G20LS-400AV PDF

Datasheet Details

Part number:

BLC8G20LS-400AV

Manufacturer:

Ampleon

File Size:

493.62 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G20LS-400AV Power LDMOS transistor Ampleon

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