Datasheet4U.com

BLP5LA55SG - Power LDMOS transistor

Ampleon

📥 Download Datasheet

BLP5LA55SG Datasheet Preview — Preview of BLP5LA55SG PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BLP5LA55SG
Manufacturer	Ampleon
File Size	1.89 MB
Description	Power LDMOS transistor
Datasheet	BLP5LA55SG-Ampleon.pdf

BLP5LA55SG Product details

Description

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz.

Features

High efficiency.
Integrated dual sided ESD protection.
Extreme ruggedness 65 : 1.
High power gain.
Excellent reliability.
Wideband.
High linearity.
For RoHS compliance see the product details on the Ampleon website 1.3.

📁 BLP5LA55SG Similar Datasheet

BLP55 - three-output ac-dc power conversion (Power-One)
BLP021N10 - MOSFET (BELLING)
BLP023N10 - MOSFET (BELLING)
BLP0240 - Si PIN junction photodiode (SHANGHAI BELLING)
BLP02N08 - MOSFET (BELLING)
BLP038N10GL - MOSFET (BELLING)
BLP038N15 - MOSFET (BELLING)
BLP03N10 - MOSFET (BELLING)

Other Datasheets by Ampleon

BLP0427M9S20 - Power LDMOS transistor
BLP0427M9S20G - Power LDMOS transistor
BLP05H6110XR - Power LDMOS transistor
BLP05H6110XRG - Power LDMOS transistor
BLP05H6150XR - Power LDMOS transistor
BLP05H6150XRG - Power LDMOS transistor

Published: Nov 30, 2024 |