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BLP5LA55SG Power LDMOS transistor

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Description

BLP5LA55SG Power LDMOS transistor Rev.1 * 7 April 2023 Product data sheet 1.Product profile 1.1 General .
This 13.

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Datasheet Specifications

Part number
BLP5LA55SG
Manufacturer
Ampleon
File Size
1.89 MB
Datasheet
BLP5LA55SG-Ampleon.pdf
Description
Power LDMOS transistor

Features

* High efficiency
* Integrated dual sided ESD protection
* Extreme ruggedness 65 : 1
* High power gain
* Excellent reliability
* Wideband
* High linearity

Applications

* supporting the frequency range from HF up to 520 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; in a class-AB demo circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 145 to 165 893 15.0 63 >23.0 380 to 450 80 13.6 55 >20.4 520 100

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