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AFBR-S4N44P164M - 4 x 4 NUV-MT Silicon Photomultiplier Array

Datasheet Summary

Description

The Broadcom® AFBR-S4N44P164M is a 4×4 silicon photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons.

Features

  • 4×4 SiPM array.
  • Array size: 16.00 mm × 16.00 mm.
  • High PDE (63% at 420 nm).
  • Excellent SPTR and CRT.
  • Excellent uniformity of breakdown voltage.
  • Excellent uniformity of gain.
  • 4-side tileable, with high fill factors.
  • Cell pitch: 40 μm.
  • Highly transparent epoxy protection layer.
  • Operating temperature range from.
  • 20°C to +50°C.
  • RoHS, CFM, and REACH compliant.

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Datasheet preview – AFBR-S4N44P164M

Datasheet Details

Part number AFBR-S4N44P164M
Manufacturer Broadcom
File Size 2.24 MB
Description 4 x 4 NUV-MT Silicon Photomultiplier Array
Datasheet download datasheet AFBR-S4N44P164M Datasheet
Additional preview pages of the AFBR-S4N44P164M datasheet.

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Full PDF Text Transcription

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AFBR-S4N44P164M 4×4 NUV-MT Silicon Photomultiplier Array Data Sheet Description The Broadcom® AFBR-S4N44P164M is a 4×4 silicon photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons. This SiPM is based on NUV-MT technology, which combines improved photo-detection efficiency (PDE) with a decreased dark count rate and reduced crosstalk compared to NUV-HD technology. The pitch of SiPMs is 4 mm in both directions. Larger areas can be covered with a pitch of 16 mm by tiling multiple AFBR-S4N44P164M arrays almost without any edge losses.
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