SI2309 - P-Channel 60-V(D-S) MOSFET

Datasheet Details

TrenchFET Power MOSFET.
RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃).
1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation.
1,2 L = 0.1 mH TA=25℃ TA=70℃ IAS PD Operating Junction and Storage Temperature Range Tj. Tstg Maximum Junction-to-Ambient.
2 RthJA Maximum Junction-to-Ambient.
3.
1. Pulse Width limited by maximum jun.

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Published: Nov 28, 2018 |