SI2309 Datasheet - CCSemi

SI2309 P-Channel 60-V(D-S) MOSFET

SI2309 Features

* TrenchFET Power MOSFET

* RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃)

* 1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation

* 1,2 L = 0.1 mH

Datasheet Details

SI2309

CCSemi

324.79 KB

P-channel 60-v(d-s) mosfet.

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SI2309 P-Channel 60-VD-S MOSFET CCSemi

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