SI2309DS Datasheet (Vishay Siliconix)

SI2309DS, P-Channel MOSFET

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) 0.340 @ VGS = -10 V 0.550 @ VGS = -4.5 V ID (A) - 1.25 -1 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9) Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature