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MJE350 - PNP EPITAXIAL SILICON POWER TRANSISTOR

The MJE350 by CDIL is a PNP EPITAXIAL SILICON POWER TRANSISTOR. Below is the official datasheet preview.

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Official preview page of the MJE350 PNP EPITAXIAL SILICON POWER TRANSISTOR datasheet (CDIL).

Datasheet Details

Part number MJE350
Manufacturer CDIL
File Size 73.06 KB
Description PNP EPITAXIAL SILICON POWER TRANSISTOR
Datasheet download datasheet MJE350-CDIL.pdf
Additional preview pages of the MJE350 datasheet.

MJE350 Product details

Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 UNIT V V V mA W mW/ºC W W/ºC ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25 ELECTRICAL CHARACTERISTICS

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