MJE350

PNP EPITAXIAL SILICON POWER TRANSISTOR

CDIL

MJE350 General Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3..

MJE350 Datasheet (73.06 KB)

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MJE350

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CDIL

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73.06 KB

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Pnp epitaxial silicon power transistor.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plasti.

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MJE350 PNP EPITAXIAL SILICON POWER TRANSISTOR CDIL

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MJE350 General Description

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